Semi-conductors based on arsenide and antimony, mixed v group four and five element alloys; semiconductors containing superlattice structures and high electron mobility transistors structures; infrared wave semiconductor lasers for non-medical purposes; long-wave infrared spectral band lasers with a radial waveguide gasb based on gallium and antimony for industrial use; surface-emitting lasers not for medical use; infrared lasers not for medical use; thermo-photovoltaic cells; quantum well infrared photodetectors; second type superlattice infrared detectors; photodiodes; avalance photodiodes, p-i-n photodiodes, quantum cascade lasers not for medical use; terahertic quantum cascade lasers not for medical use; schottky diodes; holo optical sensors; heterostructural bipolar transistors; high electron beam field transistors; high-frequency high electronic mobility field transistors; resonant tunnel diodes; laser scalpels, other than for medical use, namely, scalpels for laboratory use; laser speed detectors; lasers for industrial use; lasers for measuring purposes; lasers for scientific use, not for medical purposes; lasers for military use, not for medical purposes; optical semiconductor amplifiers; semiconductor device; semiconductor chips